Low/High Temperature Injectors
Up to 4 distinct process gases
Rapid swtiching of the flux: integrated Run/Vent valves
Full software control solution
Robust, reliable for long lifetime
- Two models for either low or high temperatures
Depending on the nature of the precursor and its thermal stability relative to the growth temperature, the gas injector operates either at a low temperature (< 100°C) for preventing both condensation and dissociation of compounds before on-substrate cracking, or at a high temperature (> 600°C) to thermally decompose the molecular species before impinging on the substrate. Riber gas injectors are fitted to the evaporation flange through a standard UHV flange, enabling installation on most gas-source MBE and CBE systems. Gas injectors feature independent 1/4 inch VCR® male gas inlets handling up to four distinct process gases, depending on the model of injector selected.
The source switching is based on a run/vent operation using a set of two-way valves for each gas line serving the injector. This valves are located as close as possible to the growth chamber to ensure rapid switching of sources to produce abrupt layer interfaces.
The vent outlet is connected to a vent pump for higher pumping speed to optimize gas shut-off and prevent memory effects.
- CF 63 assembly flange
- Up to 4 process gas
- Ta filament heater
- Bakeout temperature to 250°C
- Operating temperature: 100-900°C for LTI and 600-1100°C for HTI
- Gas connector: DN16CF flange, ¼ VCR
- Rugged and reliable for long lifetime
- Low power consumption
- Compatible with all MBE systems
Molecular beam epitaxy of GaN under N rich condition using NH3, CNRS- CRHEA,Japaneese Journal of Applied Physics 1999 Vol38, Part 1, number 2A
High doping level in Mg doped GaN layer grown at low temperature, CNRS- CRHEA, Journal of Applied Physics 103 (2008)
N+ GaN grown by ammonia molecular beam epitaxy: application to regrown contact, ICMP - EPFL, Applied Physics Letters 105 (2014)
Intentional ptype doping by carbon in MOMBE of GaAs, Physikalisches Institute Aachen, Journal of Electronic Materials vol15, Iss2, 1986
First step to Si photonics: synthesis of quantum dots light emitters on GaP substrate by MBE, INSA Rennes, Physic status solidi vol6, Iss10, 2009
Self organiszed growth of InAs quantum wires and dots on InP (001): the role of vicinal substrates, University of Humboldt, Applied Physics Letters 86 2005