Gallium nitride is widely viewed as the most important semiconductor since silicon. It handles very high currents with ease, operates over a vast frequency range, delivers high performance in very hot environments and spans a spectral range from the ultraviolet through to the blue and green.
Today’s blue, green and white gallium nitride LEDs back-light the displays in handsets, laptops and TVs, and these devices are starting to make inroads into general lighting. Meanwhile, lasers based on this wide bandgap semiconductor are extracting data of Blu-ray discs, and transistor cousins are forming high frequency products for improving base station efficiency.
MBE is particularly suited to the growth of gallium nitride transistors. To cater to the developers of these devices, Riber launched the world's first MBE system dedicated to nitride growth in 1997. Since then Riber has expanded its range of industry-leading reactors for gallium nitride deposition to include the Compact 12, Compact 21 and MBE 412 research systems, and the MBE 49 and MBE 6000 production reactors.
|Master Sources||RF Plasma Sources|
|Nitride Resistant Heater||MBE Systems|