RIBER_Technology data

Technology data

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General documentation about most important compounds

Semiconductor properties

Vapor pressure

Energy gap values

Wavelength variations / composition

Radiative transitions

Semiconductor properties

	Element or Compound	Name	Crystal^a Structure	Lattice Constant at 300 K (Å)	Bandgap (eV)		Mobility at 300 K (cm²/V-s)^c		Band^b
					300 K	0 K	Elec.	Holes
Element	C	Carbon (diamond)	D	3.56683	5.47	5.48	1800	1200	I
	Ge	Germanium	D	5.64613	0.66	0.74	3900	1900	I
	Si	Silicon	D	5.43095	1.12	1.17	1500	450	I

IV - IV	SiC	Silicon carbide	W	a=3.086, c=15.117	2.996	3.03	400	50	I

III - V	AlAs	Aluminum arsenide	Z	5.6605
	AlP	Aluminum phosphide	Z	5.4510
	GaAs	Gallium arsenide	Z	5.6533	1.42	1.52	8500	400	D
	GaN	Gallium nitride	W	a=3.189, c=5.185	3.457	3.50	380
	GaP	Gallium phosphide	Z	5.4512	2.26	2.34	110	75	I
	GaSb	Gallium antimonide	Z	6.0959	0.72	0.81	5000	850	D
	InAs	Indium arsenide	Z	6.0584	0.36	0.42	33000	460	D
	InP	Indium phosphide	Z	5.8686	1.35	1.42	4600	150	D
	InSb	Indium antimonide	Z	6.4794	0.17	0.23	80000	1250	D

II - VI	CdSe	Cadmium selenide	Z	6.050	1.70	1.85	800		D
	CdTe	Cadmium telluride	Z	6.482	1.56		1050	100	D
	ZnO	Zinc oxide	R	4.580	3.35	3.42	200	180	D
	ZnS	Zinc sulfide	Z	5.420	3.68	3.84	165	5	D
	ZnS	Zinc sulfide	W	a=3.82, c=6.26

^a D= Diamond, W= Wurtzite, Z= Zincblende, R= Rock salt.,
^b I=Indirect, D=Direct
^c the values are for drift mobilities obtained in the purest and most perfect materials to date

Crystal structures

Diamond (Si, Ge, C, etc)

Zinc Blende (GaAs, InP, etc)

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Vapor pressure

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Energy gap values

Energy Gap Values for In_xGa_1-xAs at 300K

energy gap E_g for In_xGa_1-xAs at 300K, for x between 0 and 1 have been calculated by use of the formula
E_g(x) = 1.425eV – 1.501eV*x+0.436eVeV*x²

Indium Content x	Energy Gap E_g eV	Corresponding Optical Wavelength nm
0.000	1.425	870.2
0.050	1.351	917.8
0.100	1.279	969.3
0.150	1.210	1025
0.200	1.142	1086
*	*	*
0.250	1.077	1151
0.300	1.014	1223
0.350	0.953	1301
0.400	0.894	1386
0.450	0.838	1480
*	*	*
0.500	0.783	1583
0.550	0.731	1696

Energy Gap Values for Al_xGa_1-xAs at 293K

energy gap E_g for Al_xGa_1-xAs at 293K, for x between 0 and 0.44, have been calculated by use of the formula
E_g(x) = E_g(GaAs)+1.429eV*x-0.14eV*x²

Aluminium Content x	Energy Gap E_g eV	Corresponding Optical Wavelength nm
0.000	1.424	870.8
0.010	1.438	862.1
0.020	1.453	853.7
0.030	1.467	845.4
0.040	1.481	837.3
*	*	*
0.050	1.495	829.4
0.060	1.509	821.6
0.070	1.523	814.0
0.080	1.537	806.5
0.090	1.551	799.2
*	*	*
0.100	1.565	792.1
0.110	1.579	785.1

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Wavelength variations

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Radiative transitions

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Holes