Inserting a silicon germanium film on top of silicon introduces strain into a device, speeding the passage of electrons. This modification to silicon transistors has helped to maintain the march of Moore’s law, and has also aided the development of various wireless applications, including Wi-Fi and automotive radar.
Riber supports the development of silicon germanium films with a version of its Compact 21 that has been optimized for the growth of this alloy. This system, the Compact 21 EB, employs an electron gun for controlled evaporation of the silicon source.
|Double Zone Cells||C21EB|