MBE 8000 – Production System
Presentation
RIBER is pleased to announce the future release of its flagship’s MBE production system, the MBE 8000 !
As a project that has been underway for several months, it is now approaching maturity and will soon be ready for deployment.
Bigger, better and more optimized, this system will be the new reference for the years to come.
As the world’s largest molecular beam epitaxy (MBE) system for the mass production of III-V compound semiconductors, it will be used to grow arsenides, phosphides and antimonides for photonics & microelectronics applications.
This 8×6″ or 4×8″ solid-source MBE system using ultra-pure metals in a UHV environment has exceeded fundamental state-of-the-art expectations in terms of design, temperature uniformity and flux uniformity for such a technology.
Tested by IntelliEPI, its President and CEO Yung-Chung Kao stated :
“The results we have obtained so far on the MBE 8000, with regard to the main key parameters – namely composition and thickness uniformity – validate the reactor concept very satisfactorily. The design proposed by Riber for the manipulator and chamber geometry enables uniform flows and very stable temperatures to be achieved, which translates into state-of-the-art performance for such a capacitive MBE system”.
Finally, Christian Dupont, CEO of Riber, said :
“Riber has been working with IntelliEpi to develop the next generation of MBE systems, offering the exceptional performance needed for the devices of the future, particularly for the VCSEL market. This is an important strategic step for Riber to demonstrate that MBE technology can take the industry to the next level of device performance. As a major equipment manufacturer, Riber also pays close attention to the environmental impact of its tools. Considerable efforts have been made to optimize cryogenic cooling and energy consumption. In addition, the entire system is fully monitored and controlled by our in-house developed process software dedicated to MBE processes.”
