MBE 8000 – Production System

4×200 mm & 8×150 mm capabilities

Key features

  • Twice the productivity of existing products
  • Outstanding uniformities achievements
  • High performance reproducibility run after run


The system is designed to meet the growing needs of compound semiconductor devices with a high level of performance.

This 8×6ʺ or 4×8ʺ solid-source MBE system using ultra-pure metals in a UHV environment has exceeded fundamental state-of-the-art expectations in terms of design, temperature uniformity and flux uniformity for such a technology.

The system is capable of growing batches of eight 150 mm (6-inch) wafers or four 200 mm (8-inch) wafers with remarkable uniformities (composition, thickness) and very low levels of defects. The platform has  been evaluated for the growth of 940 nm VCSELs (vertical cavity surface emitting lasers).

The experts’ final qualification in 2023 validated the MBE 8000 in terms of process, system robustness, stability, ergonomics and control.


Guaranteed specifications over 8×6’’ platen

Defect density ≤ 50 /cm²
Thickness uniformity (InGaAs/GaAs)SL (DDX) ± 1.5%
Composition uniformity (InGaAs/GaAs)SL (DDX) ± 1.5%
Thickness uniformity (AlAs/GaAs)SL (DDX) ± 1.5%
Si doping standard deviation uniformity < 3%
FP-Dip uniformity of  resonator 3 nm
Background carrier density 7×1014cm-3
HEMT Electron mobility 6000 cm²V-1s-1@RT
120 000 cm²V-1s-1@77K

Best achievements

Thickness uniformity InGaAs/GaAs over 8×6’’ platen

Superlattice thickness
298Å +/- 2Å


State-of-the art Fabry–Perot dip uniformity of resonator wafers over 8×6’’ platen

wavelength variation
< 3nm

Electron mobility – standard GaAs based HEMT

Electron mobility @ 77K
178 000 cm²V-1s-1



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