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MBE - Molecular Beam Epitaxy products and services

RIBER S.A is the world’s leading supplier of Molecular Beam Epitaxy (MBE) products and related services for the compound semiconductor research and industrial field. Riber MBE equipment is the most versatile and precise tool to deposit very thin layer of materials onto substrates with a very high control. MBE technology is used to design and create the newest semiconductor structures for manufacturing of a wide range of novel devices, with the best performances.

RIBER delivers MBE machines worldwide to major universities, material science institutes, compound semiconductor foundries or epiwafer suppliers. RIBER is indisputably the world leader in the field. Expert in Ultra High Vacuum technology since its date of creation in 1964, RIBER moved towards Molecular Beam Epitaxy in 1977, and has developed since a large range of research or production MBE tools, MBE components and processes, in order to support increasing demands in different fields like datacommunications, 5G/6G and VCSELs lasers, photonics, sensors, 3D sensing, displays,…

High performance and large versatility of RIBER MBE tools are perfectly adapted to the creativity of the researchers and industrials who works every day for the future and the innovation. Our only limitation is their imagination.

RIBER is also a leading supplier of high-quality material evaporation sources. These can be used to make high performances and incredibly inexpensive thin-film solar cells, create the displays of tomorrow’s organic LED TVs, and help to produce ultra-small silicon transistors that will lead to faster and more powerful data treatments.

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    About MBE

    At the heart of every LED, laser diode, solar cell and transistor is a stack of semiconductor layers, each with a carefully controlled composition, thickness and electrical conductivity. To ensure optimal device performance, these layers must be deposited in a carefully controlled manner, layer of atoms by layer, to form complex structure featuring light or waves adapted to the needs and not achievable with common silicon technology.

    MBE is the ideal growth technology for depositing films in this manner. This growth technique generally uses several solid or gaseous elements which are heated and sent onto the substrates to form layers of the right composition, thickness and doping. These layers are arranged in sequences to form the desired structures for the application or research purpose.

    The uniqueness of MBE is to be able to deposit thin layers of atoms with an incredible thickness resolution (a monolayer), a superb uniformity, cleanliness and reproducitility. Riber provides the broadest line of innovative and high quality molecular beam epitaxy (MBE) systems designed for each main lines of compound semiconductors: III-V, Gallium Nitrides, II-VI and MCT, SiGe and new materials such as Graphene.

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    Riber operates in a specific domain: we are experts in Molecular Beam Epitaxy (MBE), a technique which is used to grow compound semiconductors, and we provide Innovative Solutions for Semiconductor Industry.

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