EZ-REF – Real-time reflectivity measurement
EZ-Ref – in situ Real-time MBE GROWTH MONITORING
Main benefits
- Real-time measurement
- In situ : at the wafer surface, during the growth, under vacuum
- Determine growth rate and optical properties of your layers
- Genuinely multispectral : adress complex structures
- Seamless coupling with EZ-Instruments from Riber
Key features
Parameter | Specifications |
---|---|
Spectral Range | From 320 nm to 1700 nm |
Stability | Better than 1% variation over 40h (measured at 500 and 980 nm) |
Reflectance Noise | Lower than 0.5% |
Measurement Frenquency | Practical – in the 10 to 100 Hz range (Theoretical – up to 1000 Hz) |
Growth rate Accuracy | Better than 1% (after 100 nm growth typ.) |
Source lifetime | 1000 h |
Rotation speed range | 0-60 rpm typ. |
Viewport to sample distance | Adjustable – From 75 mm – depending on vacuum chamber dimensions |
Flexible installation angle on the reactor | 0 (normal incidence) to 70° |
Software
- Spectral reflectance chronograms display
- Cursors : wavelength over time or complete spectrum at a given moment
- Growth rate calculation module
- Advanced modules: Special VCSELs module – follow the Fabry Perot dip, stopband center and width / Optimal wavelength selection for optical structures monitoring
- Intuitive data acquisition
- Powerful data saving functions – .tsms, .csv, decimated, merged, single or multi-wavelengths,…
- “Real time” mode – up to 100 Hz
- Flexibility to share live data with other software incl. Riber Crystal XE
- Post-processing and data treatment
- Remote modbus interface
References
Find out more about EZ-REF here :
- EZ-REF is a product of the LAAS-CNRS & Riber “Epicentre Joint Laboratory” – More information : https://epicentre.cnrs.fr/en/
- “Combining in situ measurements in MBE: Study of AlGaAs properties at growth temperature” – LAAS-CNRS : https://cnrs.hal.science/hal-04710142